FJV3105R Ver la hoja de datos (PDF) - ON Semiconductor
Número de pieza
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Fabricante
FJV3105R Datasheet PDF : 7 Pages
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Thermal Characteristics(1)
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Power Dissipation
200
PD
Derate Above TA = 25°C
1.60
RθJA Thermal Resistance, Junction to Ambient
625
Note:
1. FR-4 76 x 114 x 0.6T mm3 (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Unit
mW
mW/°C
°C/W
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
BVCBO
BVCEO
ICBO
hFE
VCE(sat)
Cob
fT
VI(off)
VI(on)
R1
R1/R2
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Input-Off Voltage
Input-On Voltage
Input Resistor
Resistor Ratio
Conditions
IC = 10 µA, IE = 0
IC = 100 µA, IB = 0
VCB = 40 V, IE = 0
VCE = 5 V, IC = 5 mA
IC = 10 mA, IB = 0.5 mA
VCE = 10 V, IC = 5 mA,
f = 1 MHz
VCE = 10 V, IC = 5 mA
VCE = 5 V, IC = 100 µA
VCE = 0.3 V, IC = 20 mA
Min.
50
50
30
2.5
3.2
0.42
Typ.
3.7
250
4.7
0.47
Max.
0.1
0.3
0.3
6.2
0.52
Unit
V
V
µA
V
pF
MHz
V
V
kΩ
© 2002 Fairchild Semiconductor Corporation
FJV3105R Rev. 1.1.2
2
www.fairchildsemi.com
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