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RB721Q-40(2006) Ver la hoja de datos (PDF) - Electronics Industry

Número de pieza
componentes Descripción
Fabricante
RB721Q-40
(Rev.:2006)
EIC
Electronics Industry EIC
RB721Q-40 Datasheet PDF : 2 Pages
1 2
Certificate TH97/10561QM
Certificate TW00/17276EM
RB721Q-40
PRV : 40 Volts
IO : 30 mA
FEATURES :
* Silicon epitaxial planar
* Low forward voltage
* Small pitch enables insertion on PCBs.
* Glass sealed envelop for high reliability
* Pb / RoHS Free
APPLICATIONS :
* High speed switching
MECHANICAL DATA :
* Case: DO-34 Glass Case
* Weight: approx. 0.11g
SCHOTTKY BARRIER DIODE
DO - 34 Glass
0.063 (1.6 )max.
Cathode
Mark
0.022 (0.55)max.
1.00 (25.4)
min.
0.119 (3.04)
max.
1.00 (25.4)
min.
Dimensions in inches and ( millimeters )
Maximum Ratings and Thermal Characteristics (Ta = 25 °C )
Parameter
Maximum DC Reverse Voltage
Maximum Peak Reverse Voltage
Maximum Forward Current
Maximum Peak Forward Surge Current (60 Hz for sine wave)
Junction Temperature
Storage temperature range
Symbol
VR
VRM
IF
IFSM
TJ
TSTG
VALUE
40
40
30
200
125
-40 to + 125
Unit
V
V
mA
mA
°C
°C
Electrical Characteristics (Ta = 25 °C )
Parameter
Reverse Current
Forward Voltage
Capacitance between terminals
Symbol Test Condition
Min
Typ
Max
Unit
IR
VR = 25 V
VF
IF = 1 mA
CT
VR = 1 V, f = 1MHz
-
-
0.5
µA
-
-
0.37
V
-
2.0
-
pF
Page 1 of 2
Rev. 01 : May 16, 2006

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