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BCW66H

45 V, 800 mA NPN general-purpose transistor

NXP Semiconductors. 

Nexperia

BCW66 series

45 V, 800 mA NPN general-purpose transistor

Symbol Parameter

Conditions

IBM

peak base current

single pulse; tp ≤ 1 ms

Ptot

total power dissipation

Tamb ≤ 25 °C

[1]

Tj

junction temperature

Tamb

Tstg

ambient temperature

storage temperature

[1] Device mounted on an FR4 Printed-Circuit-Board (PCB), single-sided chopper, tin-plated and standard footprint.

Min

-

-

-

-55

-65

400

Ptot

(mW)

300

aaa-026537

Max

200

250

150

150

150

Unit

mA

mW

°C

°C

°C

200

100

0

-75

-25

25

FR4 PCB, standard footprint

Figure 1. Power derating curve

9 Thermal characteristics

Table 6. Thermal characteristics

Symbol Parameter

Rth(j-a)

thermal resistance from junction

to ambient

Conditions

in free air

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

75

125

175

Tamb (°C)

Min Typ Max Unit

[1]

-

-

500 K/W

BCW66x_SER

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 1 — 21 April 2017

© Nexperia B.V. 2017. All rights reserved.

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