DG213 Ver la hoja de datos (PDF) - Temic Semiconductors
Número de pieza
componentes Descripción
Fabricante
DG213 Datasheet PDF : 7 Pages
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DG213
Test Circuits (Cont’d)
+5 V
VL
VS1
S1
IN1
VS2
S2
IN2
GND
+15 V
V+
D1
VO1
D2
VO2
V–
–15 V
RL2
300 kW
CL2
35 pF
RL1
1 kW
CL1
35 pF
Logic
3V
Input
0V
VS1
VO1
Switch 0 V
Output VS2
VO2
Switch 0 V
Output
50%
90%
90%
tD
tD
CL (includes fixture and stray capacitance)
Figure 3. Break-Before-Make
+15 V
C
VS
Rg = 50 W
0V, 2.4 V
V+
S
D
IN
GND
V– C
Off Isolation = 20 log VS
VO
–15 V
Figure 4. Off Isolation
C
+15 V
V+
VS
S1
D1
VO
Rg = 50 W
IN1
0V, 2.4 V
RL
NC
S2
D2
0V, 2.4 V
IN2
C = RF bypass
XTALK Isolation = 20 log
VS
VO
GND
V– C
–15 V
50 W
VO
RL
Figure 5. Channel-to-Channel Crosstalk
Rg
Vg
3V
+15 V
V+
S
D
IN
GND
V–
–15 V
VO
CL
1000 pF
DVO
VO
INX ON
OFF
ON
DVO = measured voltage error due to charge injection
The charge injection in coulombs is Q = CL x DVO
Figure 6. Charge Injection
6
Siliconix
S-56461—Rev. C, 29-Dec-97
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