RJK005N03FRA Ver la hoja de datos (PDF) - ROHM Semiconductor
Número de pieza
componentes Descripción
Fabricante
RJK005N03FRA Datasheet PDF : 8 Pages
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RJK005N03FRA
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Ciss
Coss
Crss
td(on)*3
tr*3
td(off)*3
tf*3
VGS = 0V
VDS = 10V
f = 1MHz
VDD ⋍ 15V,VGS = 4.0V
ID = 250mA
RL ⋍ 60Ω
RG = 10Ω
Datasheet
Values
Unit
Min. Typ. Max.
-
60
-
-
24
-
pF
-
12
-
-
9
-
-
11
-
ns
-
16
-
-
31
-
lGate charge characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Total gate charge
Gate - Source charge
Gate - Drain charge
Qg*3
Qgs*3
Qgd*3
VDD ⋍ 24V,
ID = 500mA,
VGS = 4.0V
Values
Unit
Min. Typ. Max.
-
2.0 4.0
-
0.6
-
nC
-
0.7
-
lBody diode electrical characteristics (Source-Drain) (Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min. Typ. Max.
Continuous forward current
Pulse forward current
Forward voltage
IS
-
Ta = 25℃
ISP*1
-
VSD*3 VGS = 0V, IS = 500mA -
- 200 mA
- 800 mA
-
1.2
V
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20160920 - Rev.001
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