BSP316 Ver la hoja de datos (PDF) - Siemens AG
Número de pieza
componentes Descripción
Fabricante
BSP316 Datasheet PDF : 9 Pages
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BSP 316
Typ. output characteristics
ID = Æ’(VDS)
parameter: tp = 80 µs
Typ. drain-source on-resistance
RDS (on) = Æ’(ID)
parameter: tp = 80 µs, Tj = 25 °C
-1.5 Ptot = 2W
A
-1.3
kjli h
ID -1.2
-1.1
-1.0
-0.9
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
g
VGS [V]
a -2.0
f b -2.5
c -3.0
d -3.5
e -4.0
e f -4.5
g -5.0
h -6.0
i -7.0
d j -8.0
k -9.0
c l -10.0
-0.2
b
-0.1
a
0.0
0.0 -1.0 -2.0 -3.0 -4.0
V
-6.0
VDS
7.0
Ω ab
c
d
e
f
6.0
RDS (on) 5.5
5.0
4.5
4.0
3.5
3.0
2.5
g
2.0
h
1.5
ikj l
1.0 VGS [V] =
abcdef ghi j kl
0.5 -2.0 -2.5 -3.0 -3.5 -4.0 -4.5 -5.0 -6.0 -7.0 -8.0 -9.0 -10.0
0.0
0.0 -0.2 -0.4 -0.6 -0.8 -1.0 A -1.3
ID
Typ. transfer characteristics ID = f(VGS)
parameter: tp = 80 µs
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs,
-3.0
A
-2.6
ID -2.4
-2.2
-2.0
-1.8
-1.6
-1.4
-1.2
-1.0
-0.8
-0.6
-0.4
-0.2
0.0
0 -1 -2 -3 -4 -5 -6 -7 -8 V -10
VGS
Semiconductor Group
6
0.75
S
0.65
gfs 0.60
0.55
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0.0 -0.4 -0.8 -1.2 -1.6 -2.0 A -2.6
ID
Sep-12-1996
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