BSH207 Ver la hoja de datos (PDF) - NXP Semiconductors.
Número de pieza
componentes Descripción
Fabricante
BSH207 Datasheet PDF : 8 Pages
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Philips Semiconductors
P-channel enhancement mode
MOS transistor
Product specification
BSH205
ELECTRICAL CHARACTERISTICS
Tj= 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V(BR)DSS
VGS(TO)
RDS(ON)
gfs
IGSS
IDSS
Qg(tot)
Qgs
Qgd
Drain-source breakdown
voltage
Gate threshold voltage
Drain-source on-state
resistance
Forward transconductance
Gate source leakage current
Zero gate voltage drain
current
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
VGS = 0 V; ID = -10 µA
VDS = VGS; ID = -1 mA
Tj = 150˚C
VGS = -4.5 V; ID = -430 mA
VGS = -2.5 V; ID = -430 mA
VGS = -1.8 V; ID = -210 mA
VGS = -2.5 V; ID = -430 mA; Tj = 150˚C
VDS = -9.6 V; ID = -430 mA
VGS = ±8 V; VDS = 0 V
VDS = -9.6 V; VGS = 0 V;
Tj = 150˚C
ID = -0.5 A; VDD = -10 V; VGS = -4.5 V
td on
Turn-on delay time
tr
Turn-on rise time
td off
Turn-off delay time
tf
Turn-off fall time
Ciss
Input capacitance
Coss
Output capacitance
Crss
Feedback capacitance
VDD = -10 V; ID = -0.5 A;
VGS = -8 V; RG = 6 Ω
Resistive load
VGS = 0 V; VDS = -9.6 V; f = 1 MHz
MIN. TYP. MAX. UNIT
-12 -
-
V
-0.4 -0.68 -
V
-0.1 -
-
V
- 0.18 0.4 Ω
- 0.32 0.5 Ω
- 0.42 0.6 Ω
- 0.48 0.75 Ω
0.5 1.6 -
S
- ±10 ±100 nA
- -50 -100 nA
- -11 -100 µA
- 3.8 - nC
- 0.4 - nC
- 1.0 - nC
-
2
- ns
- 4.5 - ns
- 45 - ns
- 20 - ns
- 200 - pF
- 95 - pF
- 41 - pF
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
IDR
Continuous reverse drain
Ta = 25 ˚C
current
IDRM
Pulsed reverse drain current
VSD
Diode forward voltage
IF = -0.38 A; VGS = 0 V
trr
Reverse recovery time
IF = -0.5 A; -dIF/dt = 100 A/µs;
Qrr
Reverse recovery charge
VGS = 0 V; VR = -9.6 V
MIN. TYP. MAX. UNIT
-
- -0.75 A
-
-
-3
A
- -0.72 -1.3 V
-
75
-
ns
-
69
-
nC
August 1998
2
Rev 1.000
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