BAP64-06 Ver la hoja de datos (PDF) - Philips Electronics
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BAP64-06 Datasheet PDF : 7 Pages
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Philips Semiconductors
Silicon PIN diode
GRAPHICAL DATA
102
handbook, halfpage
rD
(Ω)
10
MCD777
600
handbook, halfpage
Cd
(fF)
400
Preliminary specification
BAP64-06
MCD778
1
200
10−110−1
1
10
102
IF (mA)
f = 100 MHz; Tj = 25 °C.
Fig.2 Forward resistance as a function of
forward current; typical values.
0
0
4
8
12
16
20
VR (V)
f = 1 MHz; Tj = 25 °C.
Fig.3 Diode capacitance as a function of reverse
voltage; typical values.
0
handbook, halfpage
S21 2
(dB)
−1
−2
−3
(1) (2)
(3)
(4)
MCD779
−4
−5
0.5
1
1.5
2
2.5
3
f (GHz)
(1) IF = 100 mA.
(2) IF = 10 mA.
(3) IF = 1 mA.
(4) IF = 0.5 mA.
Diode inserted in series with a 50 Ω stripline circuit
and biased via the analyzer Tee network.
Tamb = 25 °C.
Fig.4 Insertion loss (|S21|2) of the diode as a
function of frequency; typical values.
1999 Dec 17
0
handbook, halfpage
S21 2
(dB)
−10
MCD780
−20
−30
0.5
1
1.5
2
2.5
3
f (GHz)
Diode zero biased and inserted in series with a 50 Ω stripline circuit.
Tamb = 25 °C.
Fig.5 Isolation (|S21|2) of the diode as a function
of frequency; typical values.
4
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