BAP64-06 Ver la hoja de datos (PDF) - Philips Electronics
Número de pieza
componentes Descripción
Fabricante
BAP64-06 Datasheet PDF : 7 Pages
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Philips Semiconductors
Silicon PIN diode
Preliminary specification
BAP64-06
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
Per diode
VF
forward voltage
IR
reverse current
Cd
diode capacitance
rD
diode forward resistance
τL
charge carrier life time
LS
series inductance
IF = 50 mA
VR = 175 V
VR = 20 V
VR = 0; f = 1 MHz
VR = 1 V; f = 1 MHz
VR = 20 V; f = 1 MHz
IF = 0.5 mA; f = 100 MHz; note 1
IF = 1 mA; f = 100 MHz; note 1
IF = 10 mA; f = 100 MHz; note 1
IF = 100 mA; f = 100 MHz; note 1
when switched from IF = 10 mA to
IR = 6 mA; RL = 100 Ω;
measured at IR = 3 mA
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
TYP. MAX. UNIT
0.95 1.1 V
−
10
µA
−
1
µA
0.52 −
pF
0.37 −
pF
0.23 0.35 pF
20
40
Ω
10
20
Ω
2
3.8 Ω
0.7 1.35 Ω
1.55 −
µs
1.4 −
nH
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-s
thermal resistance from junction to soldering point
VALUE
220
UNIT
K/W
1999 Dec 17
3
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