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BC857T

SOT-523 Plastic-Encapsulate Transistors

Jiangsu Changjiang Electronics Technology Co., Ltd 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD

SOT-523 Plastic-Encapsulate Transistors

BC857T TRANSISTOR (PNP)

FEATURES

z Ideally suited for automatic insertion

z For Switching and AF Amplifier Applications

SOT-523

1. BASE

2. EMITTER

3. COLLECTOR

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

VCBO

VCEO

VEBO

IC

PC

TJ

Tstg

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current –Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature

Value

-50

-45

-6

-0.1

150

150

-55-150

Unit

V

V

V

A

mW

℃

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector Cutoff Current

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Base-emitter voltage

Transition frequency

Collector output capacitance

Noise figure

Symbol

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

hFE

VCE(sat)

VBE(sat)

VBE(on)

fT

Cob

NF

Test conditions

IC= -10µA, IE=0

IC= -10mA, IB=0

IE= -1µA, IC=0

VCB=-30V

VCE=-5V, IC=-2mA

IC=-10mA, IB=-0.5 mA

IC=-100mA, IB=-5 mA

IC=-10mA, IB=-0.5 mA

IC=-100mA, IB= -5 mA

VCE= -5V, IC= -2mA

VCE= -5V, IC= -10mA

VCE= -5 V, IC= -10mA

f=100MHz

VCB=-10V,f=1MHz

VCE=-5V,IC=-0.2mA,

f=1kHz,

RS=2kΩ,BW=200Hz

Min

-50

-45

-6

125

-600

100

Typ Max Unit

V

V

V

-15 nA

800

-0.3

V

-0.65

-0.7

V

-0.9

-750

mV

-820

MHz

4.5 pF

10 dB

CLASSIFICATION OF hFE

Rank $

BC

Range

1-250 -4 

Marking E F G

www.cj-elec.com

1

D,Jul,2015

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