HYB3164165AT Ver la hoja de datos (PDF) - Infineon Technologies

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Fabricante

HYB3164165AT

4M x 16-Bit Dynamic RAM (8k, 4k & 2k Refresh, EDO-Version)

Infineon Technologies 

HYB3164(5/6)165AT(L)-40/-50/-60

4M x 16 EDO-DRAM

TRUTH TABLE

FUNCTION

RAS LCAS UCAS WE

Standby

Read:Word

Read:Lower Byte

H H-X H-X X

LL

H

H

LL

H

H

Read:Upper Byte

LH

L

H

Write:Word

L

(Early-Write)

Write:Lower Byte

L

(Early-Write)

Write:Upper Byte

L

(Early Write)

Read-Modify-

L

Write

Hyper Page Mode 1st L

Read (Word)

Cycle

L

L

L

H

H

L

L

L

H-L H-L

Hyper Page Mode 2nd L

Read (Word)

Cycle

H-L H-L

Hyper Page Mode 1st L

Early Write(Word) Cycle

H-L H-L

Hyper Page Mode 2nd L

Early Write(Word) Cycle

H-L H-L

Hyper Page Mode 1st L

RMW

Cycle

H-L H-L

Hyper Page Mode 2st L

RMW

Cycle

H-L H-L

RAS only refresh

CAS-before-RAS

refresh

Test Mode Entry

Hidden Refresh

(Read)

Hidden Refresh

(Write)

Self Refresh

(L-version only)

LH

H

H-L L

L

H-L L

L

L-H- L

L

L

L-H- L

L

L

H-L L

H

L

L

L

H-L

H

H

L

L

H-L

H-L

X

H

L

H

L

X

OE ROW COL I/O1-

ADD ADD I/O16

XX

X

High Impedance

L ROW COL Data Out

L ROW COL Lower Byte:Data Out

Upper-Byte:High-Z

L ROW COL Lower Byte:High-Z

Upper Byte:Data Out

X ROW COL Data In

X ROW COL Lower Byte:Data Out

Upper-Byte:High-Z

X ROW COL Lower Byte:High-Z

Upper Byte:Data Out

L - H ROW COL Data Out, Data In

L ROW COL Data Out

L n/a COL Data Out

X ROW COL Data In

X n/a COL Data In

L - H ROW COL Data Out, Data In

L - H n/a COL Data Out, Data In

X ROW n/a High Impedance

XX

n/a High Impedance

XX

n/a High Impedance

L ROW COL Data Out

X ROW COL Data In

XX

X

High Impedance

Semiconductor Group

4

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