HVM187S Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics

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Fabricante

HVM187S

Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator

Hitachi -> Renesas Electronics 

HVM187S

Absolute Maximum Ratings (Ta = 25°C)

Item

Reverse voltage

Forward current

Power dissipation

Junction temperature

Storage temperature

Note: Per one device

Symbol

VR

IF

Pd*

Tj

Tstg

Value

Unit

60

V

50

mA

100

mW

125

°C

–55 to +125

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ Max Unit Test Condition

Forward voltage

VF

Reverse current

IR

Capacitance

C

Forward resistance

rf

ESD-Capability

—

—

—

—

—

—

—

3.5 —

200 —

1.0

V

100 nA

2.4

pF

5.5

Ω

—

V

IF = 10mA

VR = 60V

VR = 0V, f = 1MHz

IF = 10mA, f = 100MHz

*C = 200pF, Both forward and

reverse direction 1 pulse.

Note: Failure criterion; IR ≥ 100nA at VR = 60V

10 –2

10–4

10–6

10–8

10–10

10–12

0

0.2 0.4 0.6 0.8 1.0

Forward voltage VF (V)

Fig.1 Forward current Vs. Forward voltage

2

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