KSC5305DF Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
KSC5305DF Datasheet PDF : 6 Pages
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Electrical Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO Collector-Base Breakdown Voltage IC=1mA, IE=0
BVCEO Collector-Emitter Breakdown Voltage IC=5mA, IB=0
BVEBO Emitter Cut-off Current
IE=1mA, IC=0
ICBO Collector Cut-off Current
VCB=500V, IE=0
IEBO Emitter Cut-off Current
VEB = 9V, IC = 0
hFE1
hFE2
DC Current Gain
VCE=1V, IC=0.8A
VCE=1V,IC=2A
VCE(sat) Collector-Emitter Saturation Voltage IC=0.8A, IB=0.08A
IC=2A, IB=0.4A
VBE(sat) Base-Emitter Saturation Voltage
IC=0.8A, IB=0.08A
IC=2A, IB=0.4A
Cob Output Capacitance
VCB = 10V, f=1MHz
tON
Turn On Time
tSTG Storage Time
tF
Fall Time
VCC=300V, IC =2A
IB1 = 0.4A, IB2=-1A
RL = 150Ω
tSTG Storage Time
tF
Fall Time
VCC=15V,VZ=300V
IC = 2A,IB1 = 0.4A
IB2 = -0.4A, LC=200μH
VF
Diode Forward Voltage
IF = 1A
IF = 2A
trr
* Reverse recovery time
(di/dt = 10A/μs)
IF = 0.4A
IF = 1A
IF = 2A
* Pulse Test : Pulse Width=5mS, Duty cycles ≤ 10%
Min.
800
400
12
-
-
22
8
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
800
1.4
1.9
Max.
-
-
-
10
10
-
-
0.4
0.5
1.0
1.0
75
150
2
0.2
2.25
150
Units
V
V
V
μA
μA
V
V
V
V
pF
ns
μs
μs
μs
ns
1.5
V
1.6
V
-
ns
-
μs
-
μs
© 2009 Fairchild Semiconductor Corporation
KSC5305DF Rev. A3
2
www.fairchildsemi.com
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