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CGY196(1999) Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza
componentes Descripción
Fabricante
CGY196
(Rev.:1999)
Infineon
Infineon Technologies Infineon
CGY196 Datasheet PDF : 22 Pages
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GaAs MMIC
CGY 196
_________________________________________________________________________________________________________
Electrical characteristics [2.4GHZ ISM-Application]
(TA = 25°C , f=1.89 GHz, ZS=ZL=50 Ohm, unless otherwise specified)
Characteristics
Symbol min
typ
max
Supply current
VD=3.3V; Pin = +3 dBm
Supply current
VD=3.3V; Pin = -10 dBm
Output Power
VD=3.3V; Pin = +3 dBm
Overall Power added Efficiency
VD=3.3V; Pin = +3 dBm
Off Isolation
VD=0V; Pin = 3 dBm
Supply current
VD=4.8V; Pin = +6 dBm
Supply current
VD=4.8V; Pin = -10 dBm
Output Power
VD=4.8V; Pin = +6 dBm
Overall Power added Efficiency
VD=4.8V; Pin = +6 dBm
Off Isolation
VD=0V; Pin = 3 dBm
IDD
-
300
-
IDD
-
450
-
Po
26.0
PAE
40
-
-S21
34
IDD
-
300
-
IDD
-
450
-
Po
27.5
PAE
40
-
-S21
34
Load mismatch
Pin=3 dBm , VD≤3.6V , ZS=50 Ohm,
Load VSWR = 20:1 for all phase,
Load mismatch
Pin=6 dBm , VD5.0V , ZS=50 Ohm,
Load VSWR = 20:1 for all phase,
Stability
Pin=3 dBm, VD=3.6V, ZS=50 Ohm,
Load VSWR = 10:1 for all phase
Stability
Pin=6 dBm , VD=5.0V , ZS=50 Ohm,
Load VSWR = 10:1 for all phase,
-
No module damage
for 10 sec.
-
No module damage
for 10 sec.
-
All spurious output
more than 70 dB below
desired signal level
-
All spurious output
more than 70 dB below
desired signal level
Unit
mA
mA
dBm
%
dB
mA
mA
dBm
%
dB
-
-
-
-
Electrical characteristics [2.4GHZ ISM-Application]
Infineon Aktiengesellschaft
14
01.3.1999
GS PD GaAs

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