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2SC3163

Silicon NPN Power Transistor

New Jersey Semiconductor 

j

\S

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

iodu.ati, One..

Silicon NPN Power Transistor

TELEPHONE: (973) 376-2922

(212)227-6005

FAX: (973) 376-8960

2SC3163

DESCRIPTION

• Low Collector Saturation Voltage-'-

:VCE(satr 1.0V(Max.)@lc=3A

• Fast Switching Speed

APPLICATIONS

• Designed for switching regulator, DC-DC converter and high

frequency power amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25'C)

SYMBOL

PARAMETER

VALUE

UNIT

VOBO

Collector-Base Voltage

500

V

VCEO

VCER

VEBO

Collector-Emitter Voltage

Collector-Emitter Voltage

RBE= 100Q

Emitter-Base Voltage

400

V

450

V

7

V

Ic

Collector Current-Continuous

6

A

ICM

Collector Current-Peak

12

A

IB

Base Current-Continuous

2

A

IBM

Base Current-Peak

Collector Power Dissipation

PC

@ TC=25"C

Tj

Junction Temperature

Tstg

Storage Temperature Range

4

A

50

W

150

•c

-55-150

-c

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c Thermal Resistance,Junction to Case

MAX UNIT

2.5 °c/w

Qualify Semi-Conductors

IP

''* '

! 2 ''•

'--X

PIN 1.BASE

2. COLLECTOR

3 Bi/IITTER

TO-220C package

- BH

-* v H j- ~f

U i ±€f§

f

A •".•

— I5?6

r 1 t

«H

11

K

Hp

1 •1 ii*5 00

ta ^

1

^™ J

cH

A

DHV

A

B

C

D

F

G

H

j

K

L

Q

R

S

U

V

mm

MIN MAX

15.70 15.90

9.90 10.10

4.20 4.40

0.70 0.90

3.40 3.60

4.98 5.18

2.70 2.90

0.44 0.46

13.20 13.40

1.10 1.30

2.70 2.90

2.50 2.70

1.20 Hl.31

6.45 6.65

8.66 8.86

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