MTB1306 Ver la hoja de datos (PDF) - ON Semiconductor
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MTB1306 Datasheet PDF : 9 Pages
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MTB1306
TYPICAL ELECTRICAL CHARACTERISTICS
150
VGS = 10 V
125
TJ = 25°C
100
5.0 V
4.0 V
180
160 VDS ≥ 10 V
140
120
100
75
80
50
25
0
0 0.25 0.5 0.75 1.0 1.25 1.5 1.75 2.0
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
60
25°C
40
20 125°C
0
TJ = −55°C
2.0
2.5
3.0
3.5
4.0
4.5
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.010
0.009
0.008
0.007
0.006
0.005
0.004
0.003
0.002
0.001
0
20
TJ = 100°C
25°C
−55°C
VGS ≥ 10 V
40
60
80
100
120
140
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current
and Temperature
0.009
0.008
TJ = 25°C
0.007
VGS = 5.0 V
0.006
10 V
0.005
0.004
20 30 40 50 60 70 80 90 100 110 120 130 140 150
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
2.0
VGS = 10 V
ID = 38 A
1.5
1.0
0.5
10,000
1000
100
TJ = 125°C
100°C
0
−50 −25
0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
10
5.0
10
15
20
25
30
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−To−Source Leakage
Current versus Voltage
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