2SC2827 Ver la hoja de datos (PDF) - New Jersey Semiconductor

Número de pieza

componentes Descripción

Fabricante

2SC2827

Silicon NPN Power Transistor

New Jersey Semiconductor 

\sIEIIEU

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

io<lu.ctit (Jna.

Silicon NPN Power Transistor

TELEPHONE: (973) 376-2922

(212)227-6005

FAX: (973) 376-8960

2SC2827

DESCRIPTION

• Collector-Emitter Sustaining Voltage-

: VCECHSUSP 400V(Min)

• Fast Switching Speed

• Collector-Emitter Saturation Voltage-

tr 0.7V(Max.)@ lc= 3A

APPLICATIONS

• Designed for use in high-voltage,high-speed, power switching

applications such as switching regulators, inverters, solenoid

and relay drivers.

ABSOLUTE MAXIMUM RATINGS(Ta=25'C)

SYMBOL

PARAMETER

VALUE

VCBO

Collector-Base Voltage

500

VCEO Collector-Emitter Voltage

400

VEBO

Emitter-Base Voltage

7

Ic

Collector Current-Continuous

3

ICM

Collector Current-Peak

6

IB

Base Current-Continuous

2

Collector Power Dissipation

PC

@ TC=25'C

50

Tj

Junction Temperature

150

Tstg

Storage Temperature Range

-55-150

UNIT

V

V

V

A

A

A

W

t:

•c

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c Thermal Resistance, Junction to Case

Qualify 5emi-Conductors

MAX UNIT

3.125 •c/w

*'•

-X

-3

PIN 1.BASE

2 COLLECTOR

3. EMITTER

TO-220C package

•« B »j

^Gfy ¥ -* V •« 1 f

Ma

U4

r

A

—i

¥I

K

r.:'

»

iI

H <* f-

¥ ...r._

c|

1

»l j

-

mm

DIM MM MAX

A 15.50 15.90

B 9.90 10.20

r 4.20 4.50

D 0.70 0.90

F 3.40 3.70

G 4.98 5.18

H 2.SS 2.90

j 0.44 0.60

K 13.00 13.40

L 1.20 1,45

0 2.70 2.90

R 2.30 2.70

S 1.29 1.35

U 6.45 6.65

V 8.66 8.86

Share Link: