2SC2485 Ver la hoja de datos (PDF) - New Jersey Semiconductor
Número de pieza
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Fabricante
2SC2485 Datasheet PDF : 2 Pages
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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
ioductn, One.
Silicon NPN Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SC2485
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min)
• High Power Dissipation
• Complement to Type 2SA1061
APPLICATIONS
• Designed for high power audio frequency amplifier
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25r)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
5
V
Ic
Collector Current-Continuous
6
A
ICM
Collector Current-Peak
Collector Power Dissipation
PC
@ Tc=25 'C
Tj
Junction Temperature
10
A
70
W
150
'C
Tstg
Storage Temperature Range
-55-150
"C
•* -•!.^ W *5*,•5&-'
., 2 3
:-COLLEI:TOR
3. EMITTER
TO-3PM package
B-— *- •• C •*-
A ; !E
I if,.,..
*H
!*
K
i
^ -*.
G -*- *-t_
_-,..- j
---0
mm
DIM MIN MAX
A 19.60 20,10
B 15,50 15.70
C. 4.70 4.90
D 0.90 1.10
E 1.90 2.10
F 3.40 3,60
G 2.90 3.20
h 3.2:0 3,40
j 0.595 0.605
K 20,00 20.70
L 1.90 2.20
K 10.89 10.91
Q 4.90 5.10
R 3.35 3,45
c 1 995 2 100
lr[ 5,90 6.10
y 9.90 10,10
N.I Seini-C'duductors reserves the right to change test conditions, parameter limits and package dimensions uithout
notice. Information furnished by NJ Semi-Conductors is helieved to he hath accurate and reliable at the time of point!
to press. I loucver, N.I Semi-Conductors assumes no responsibility lor an> errors or omissions discovered in itsuse.
N.I Semi-Conductors enanirnties customers to verily thai datasheets are current before placing orders.
Quality Semi-Conductors
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