2SB1316 Ver la hoja de datos (PDF) - Inchange Semiconductor

Número de pieza

componentes Descripción

Fabricante

2SB1316

Silicon PNP Power Transistor

Inchange Semiconductor 

isc Silicon PNP Power Transistor

INCHANGE Semiconductor

2SB1316

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

BVCBO Collector-Base breakdown voltage

IC=-50uA

MIN

TYP.

MAX

UNI

T

-100

V

BVCEO Collector-Emitter breakdown voltage IC=-5mA

-100

V

BVEBO Emitter-Base breakdown voltage

IE=-5mA

-10

V

VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -1mA

ICBO

Collector Cutoff Current

VCB= -100V; IE= 0

IEBO

Emitter Cutoff Current

VEB= -7V; IC= 0

-1.5 V

-10 μA

-3.0 mA

hFE

DC Current Gain

IC= -1A; VCE= -2V

1000

10000

COB

Output Capacitance

IE= 0; VCB= -10V; f= 1.0MHz

35

pF

fT

Current-Gain—Bandwidth Product

IC= -0.1A; VCE= -5V,f= 100MHz

50

MHz

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