2SA1063 Ver la hoja de datos (PDF) - New Jersey Semiconductor

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Fabricante

2SA1063

Silicon PNP Power Transistor

New Jersey Semiconductor 

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

:J toducts., Una.

Silicon PNP Power Transistor

TELEPHONE: (973) 376-2922

(212)227-6005

FAX: (973) 376-8960

2SA1063

DESCRIPTION

• Collector-Emitter Breakdown Voltage-

:V(BR)CEO=-120V(Min.)

• Good Linearity of I>E

• Wide Area of Safe Operation

• Complement to Type 2SC2487

APPLICATIONS

• Designed forAF amplifier, high power amplifier applications.

PIN 1.BASE

2. BETTER

3. COLLECT OR (CASE)

TO-3 package

ABSOLUTE MAXIMUM RATINGS(Ta=25'C)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-150

V

VCEO Collector-Emitter Voltage

-120

V

VEBO

Emitter-Base Voltage

-5

V

Ic

Collector Current-Continuous

Collector Power Dissipation

PC

@TC=25"C

T,

Junction Temperature

Tstg

Storage Temperature

-6

A

80

W

150

"C

-65-150

°c

DIM h

A

B

C

D

E

_ji_

H

K

L

N

Q

u

V

11)111

MIN MAX

3300

25.30 366?

7.80 8.50

0.90 1 10

lA(i

I 60

1092

54&

u.sa 1350

1675 1705

19<»Q 1962

4CIO 420

WOO 3020

430 450

NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without

notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going

to press. However. NJ Semi-Conductors assumes no responsibilityfor any errors or omissions discovered in itsuse.

NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.

Quality Semi-Conductors

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