2SK2931 Ver la hoja de datos (PDF) - Renesas Electronics
Número de pieza
componentes Descripción
Fabricante
2SK2931 Datasheet PDF : 8 Pages
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2SK2931
Static Drain to Source on State
Resistance vs. Temperature
40
Pulse Test
32
ID = 20 A 10 A 5 A
24
VGS = 4 V
16
8
10 V
5, 10, 20 A
0
–40
0
40 80 120 160
Case Temperature TC (°C)
Body to Drain Diode Reverse
Recovery Time
100
50
20
10
0.1 0.3
di / dt = 50 A / µs
VGS = 0, Ta = 25°C
1 3 10 30 100
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
100
20
ID = 45 A
80
VGS
60 VDS
16
VDD = 10 V
25 V 12
50 V
40
8
20
VDD = 50 V
4
25 V
10 V
0
0
40 80 120 160 200
Gate Charge Qg (nc)
Forward Transfer Admittance
vs. Drain Current
500
VDS = 10 V
200 Pulse Test
100
50
Tc = –25°C
20
10
5
2
1
0.5
0.1 0.3
75°C
13
25°C
10 30 100
Drain Current ID (A)
10000
5000
2000
1000
500
Typical Capacitance
vs. Drain to Source Voltage
Ciss
Coss
200
Crss
100 VGS = 0
f = 1 MHz
50
0
10 20 30 40
50
Drain to Source Voltage VDS (V)
1000
500
Switching Characteristics
td(off)
200
tf
100
tr
50
td(on)
20
VGS = 10 V, VDD = 30 V
PW = 10 µs, duty < 1 %
10
0.1 0.2 0.5 1 2 5 10 20 50 100
Drain Current ID (A)
Rev.5.00 Sep 07, 2005 page 4 of 7
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