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IXFH76N07-12 Ver la hoja de datos (PDF) - IXYS CORPORATION

Número de pieza
componentes Descripción
Fabricante
IXFH76N07-12
IXYS
IXYS CORPORATION IXYS
IXFH76N07-12 Datasheet PDF : 4 Pages
1 2 3 4
IXFH 76 N06-11
IXFH 76 N06-12
IXFH 76 N07-11
IXFH 76 N07-12
Symbol
gfs
Ciss
Coss
C
rss
t
d(on)
tr
t
d(off)
tf
Q
g(on)
Qgs
Q
gd
RthJC
R
thCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDS = 10 V; ID = 40 A, pulse test
30 40
S
4400
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
2000
pF
1200
pF
VGS = 10 V, VDS = 50 V, ID = 30 A
R
G
=
1
W
(External)
40
ns
70
ns
130
ns
55
ns
240
nC
VGS = 10 V, VDS = 0.5 • VDSS, ID = 40 A
30
nC
120
nC
0.42 K/W
0.25
K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IS
VGS = 0 V
ISM
Repetitive; pulse width limited by TJM
VSD
IF = IS, VGS = 0 V,
Pulse test, t £ 300 ms, duty cycle d £ 2 %
trr
IF = 25 A, -di/dt = 100 A/ms, TJ = 25°C
VR = 25 V
TJ = 125°C
76 A
304 A
1.5 V
150
ns
250 ns
TO-247 AD (IXFH) Outline
Dim. Millimeter
Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F
5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H
- 4.5 -
0.177
J
1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L
4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-4

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