B1018 Ver la hoja de datos (PDF) - Inchange Semiconductor
Número de pieza
componentes Descripción
Fabricante
B1018 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB1018
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdownvoltage IC=-50mA; IB=0
VCEsat Collector-emitter saturation voltage IC=-4A ;IB=-0.4A
VBEsat Base-emitter saturation voltage
IC=-4A ;IB=-0.4A
ICBO
Collector cut-off current
VCB=-100V; IE=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-1A ; VCE=-1V
hFE-2
DC current gain
IC=-4A ; VCE=-1V
fT
Transition frequency
VCE=-4V;IC=-1A
COB
Collector output capacitance
f=1MHz ; VCB=-10V;IE=0
Switching times
ton
Turn-on time
tstg
Storage time
tf
Fall time
IB1=-IB2=-0.3A
VCC=30V ,RL=10Ω
hFE-1 Classifications
O
Y
70-140
120-240
MIN TYP. MAX UNIT
-80
V
-0.3 -0.5
V
-0.9 -1.4
V
-5 μA
-5 μA
70
240
30
10
MHz
250
pF
0.4
μs
2.5
μs
0.5
μs
2
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