HYB5118160BSJ-70 Ver la hoja de datos (PDF) - Infineon Technologies
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HYB5118160BSJ-70 Datasheet PDF : 24 Pages
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HYB 5118160BSJ-50/-60/-70
1M x 16-DRAM
AC Characteristics (cont’d) 5)6)
16F
TA = 0 to 70 °C,VCC = 5 V ± 10 %, tT = 5 ns
Parameter
Symbol
Limit Values
Unit Note
-50
-60
-70
min. max. min. max. min. max.
Fast Page Mode Read-Modify-Write Cycle
Fast page mode read-write cycle tPRWC 71 –
80 –
95 –
ns
time
CAS precharge to WE
tCPWD 48 –
55 –
65 –
ns
CAS-before-RAS Refresh Cycle
CAS setup time
tCSR
10 –
10 –
10 –
ns
CAS hold time
tCHR
10 –
10 –
10 –
ns
RAS to CAS precharge time
tRPC
5
–
5
–
5
–
ns
Write to RAS precharge time
tWRP
10 –
10 –
10 –
ns
Write hold time referenced to RAS tWRH 10 –
10 –
10 –
ns
CAS-before-RAS Counter Test Cycle
CAS precharge time
tCPT
35 –
40 –
40 –
ns
Self Refresh Cycle
RAS pulse width
RAS precharge time
CAS hold time
tRASS
tRPS
tCHS
100k _
95 _
-50 _
100k _
110 _
-50 _
100k _
130 _
-50 _
ns 17
ns 17
ns 17
Semiconductor Group
9
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