Silicon NPN Planar RF Transistor
BFR92/BFR92R
Applications
RF-amplifier up to GHz range specially for wide band antenna amplifier.
Features
D High power gain
D Low noise figure
D High transition frequency
1
1
2
3
94 9280
BFR92 Marking: P1
Plastic case (SOT 23)
1= Collector; 2= Base; 3= Emitter
Absolute Maximum Ratings
Parameters
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Tamb ≤ 60°C
Storage temperature range
Maximum Thermal Resistance
Parameters
Junction ambient on glass fibre printed board
(25 x 20 x 1.5) mm3 plated with 35 mm Cu
3
2
95 10527
BFR92R Marking: P4
Plastic case (SOT 23)
1= Collector; 2= Base; 3= Emitter
Symbol
Value
Unit
VCBO
20
V
VCEO
15
V
VEBO
2
V
IC
30
mA
Ptot
200
mW
Tj
150
°C
Tstg
–65 to +150
°C
Symbol
RthJA
Value
450
Unit
K/W
TELEFUNKEN Semiconductors
1 (6)
Rev. A1, 17-Apr-96