50000
40000
Cies
Common Emitter
V = 0V, f = 1MHz
GE
T = 25℃
C
30000
20000
Coes
10000
Cres
0
0.5
1
10
30
Collector - Emitter Voltage, VCE [V]
Fig 7. Capacitance Characteristics
3000
Common Emitter
V = 300V, V = ± 15V
CC
GE
Toff
I = 300A
C
T = 25℃
C
1000
T = 125℃
C
Tf
100
50
1
10
50
Gate
Resistance,
R
G
[Ω ]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
1000
Ton
100
Tr
Common Emitter
V = 300V, V = ± 15V
CC
GE
RG = 1.5Ω
TC = 25℃
TC = 125℃
10
30 60 90 120 150 180 210 240 270 300
Collector Current, IC [A]
Fig 11. Turn-On Characteristics vs.
Collector Current
©2001 Fairchild Semiconductor Corporation
2000
Common Emitter
V = 300V, V = ± 15V
CC
GE
I = 300A
1000
C
T = 25℃
Ton
C
T = 125℃
C
Tr
100
50
1
10
50
Gate
Resistance,
R
G
[Ω ]
Fig 8. Turn-On Characteristics vs.
Gate Resistance
100000
Common Emitter
V = 300V, V = ± 15V
CC
GE
IC = 300A
TC = 25℃
TC = 125℃
Eoff
10000
Eon
1000
1
10
50
Gate Resistance, RG [Ω ]
Fig 10. Switching Loss vs. Gate Resistance
1000
Common Emitter
VCC = 300V, VGE = ± 15V
RG = 1.8Ω
TC = 25℃
TC = 125℃
Toff
Tf
100
50
30 60 90 120 150 180 210 240 270 300
Collector Current, IC [A]
Fig 12. Turn-Off Characteristics vs.
Collector Current
FMBL1G300US60 Rev. A