BSS127L Ver la hoja de datos (PDF) - Unisonic Technologies

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BSS127L

0.021A, 600V SMALL-SIGNAL-TRANSISTOR

Unisonic Technologies 

BSS127

Power MOSFET

 ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

600

V

Gate-Source Voltage

VGSS

±20

V

Drain Current

Continuous

TA=25°C

TA=70°C

ID

0.021

A

0.017

A

Pulsed (TA=25°C)

IDM

0.09

A

Peak Diode Recovery dv/dt

dv/dt

6

kV/µs

Power Dissipation (TA=25°C )

PD

0.5

W

Junction Temperature

TJ

-55~+150

°C

Storage Temperature Range

TSTG

-55~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

 THERMAL CHARACTERISTICS

PARAMETER

Junction to Ambient

SYMBOL

θJA

RATINGS

250

 ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)

UNIT

°C/W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Gate-Source Leakage Current

Forward

Reverse

Drain-Source Leakage Current

BVDSS

IGSS

ID(OFF)

ID=250µA, VGS=0V

600

V

VGS=+20V, VDS=0V

+10 +100 nA

VGS=-20V, VDS=0V

-10 -100 nA

VGS=0V, VDS=600V, TJ=25°C

0.1 µA

VGS=0V, VDS=600V, TJ=150°C

10 µA

ON CHARACTERISTICS

Gate Threshold Voltage

Static Drain-Source On-State Resistance

Forward Transconductance

VGS(TH)

VDS=VGS, ID=8µA

1.4 2.0 2.6 V

RDS(ON)

VGS=4.5V, ID=0.016A

VGS=10V, ID=0.016A

330 600 Ω

310 500 Ω

gFS

|VDS|>2|ID|RDS(ON)MAX, ID=0.01A 0.007 0.015

S

DYNAMIC PARAMETERS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

CISS

COSS

CRSS

VGS=0V, VDS=25V, f=1.0MHz

21 28 pF

2.4 3 pF

1.0 1.5 pF

SWITCHING PARAMETERS

Total Gate Charge

Gate to Source Charge

Gate to Drain Charge

Gate Plateau Voltage

Turn-ON Delay Time

Rise Time

Turn-OFF Delay Time

Fall-Time

QG

QGS

QGD

Vplateau

tD(ON)

tR

tD(OFF)

tF

VGS=0~10V, VDS=300V,

ID=0.01A

VDD=300V, VGS=10V,

ID=0.01A, RG=6Ω

0.07 0.10 nC

0.31 0.5 nC

0.65 1.0 nC

3.56

V

6.1 19.0 ns

9.7 14.5 ns

14 21 ns

115 170 ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

IS

TA=25°C

Maximum Body-Diode Pulsed Current

ISM

TA=25°C

Drain-Source Diode Forward Voltage

VSD

IF=0.016A, VGS=0V, TJ=25°C

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

tRR

VR=300V, IF=0.016A,

QRR

dIF/dt=100A/µs

0.016 A

0.09 A

0.82 1.2 V

160 240 ns

13.2 19.8 µC

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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QW-R502-824.B

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