BSS127G(2018) Ver la hoja de datos (PDF) - Unisonic Technologies
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BSS127G Datasheet PDF : 5 Pages
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BSS127
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDSS
600
V
VGSS
±20
V
Drain Current
Continuous
TA=25°C
TA=70°C
ID
0.021
A
0.017
A
Pulsed (TA=25°C)
Peak Diode Recovery dv/dt
IDM
dv/dt
0.09
A
6
kV/µs
Power Dissipation (TA=25°C)
PD
Junction Temperature
TJ
0.3
W
-55 ~ +150
°C
Storage Temperature Range
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
Junction to Ambient
θJA
325
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
UNIT
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Gate-Source Leakage Current
Forward
Reverse
Drain-Source Leakage Current
BVDSS
IGSS
ID(OFF)
ID=250µA, VGS=0V
600
V
VGS=+20V, VDS=0V
+10 +100 nA
VGS=-20V, VDS=0V
-10 -100 nA
VGS=0V, VDS=600V, TJ=25°C
0.1 µA
VGS=0V, VDS=600V, TJ=150°C
10 µA
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
Forward Transconductance
VGS(TH)
VDS=VGS, ID=8µA
1.4 2.0 2.6 V
RDS(ON)
VGS=4.5V, ID=0.016A
VGS=10V, ID=0.016A
330 600 Ω
310 500 Ω
gFS
|VDS|>2|ID|RDS(ON)MAX, ID=0.01A 0.007 0.015
S
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS=0V, VDS=25V, f=1.0MHz
21 28 pF
2.4 3 pF
1.0 1.5 pF
SWITCHING PARAMETERS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Gate Plateau Voltage
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall-Time
QG
QGS
QGD
Vplateau
tD(ON)
tR
tD(OFF)
tF
VGS=0~10V, VDS=300V,
ID=0.01A
VDD=300V, VGS=10V,
ID=0.01A, RG=6Ω
0.07 0.10 nC
0.31 0.5 nC
0.65 1.0 nC
3.56
V
6.1 19.0 ns
9.7 14.5 ns
14 21 ns
115 170 ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source Diode
Forward Current
IS
TA=25°C
0.016 A
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
TA=25°C
Drain-Source Diode Forward Voltage
VSD
IF=0.016A, VGS=0V, TJ=25°C
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
VR=300V, IF=0.016A,
Qrr
dIF/dt=100A/µs
Notes: 1. The Power Dissipation of the package may result in a lower continuous drain current.
2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%.
0.09 A
0.82 1.2 V
160 240 ns
13.2 19.8 µC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-824.F
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