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STPS2030CR Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza
componentes Descripción
Fabricante
STPS2030CR
ST-Microelectronics
STMicroelectronics ST-Microelectronics
STPS2030CR Datasheet PDF : 6 Pages
1 2 3 4 5 6
STPS2030CT/CG/CR
Fig. 5: Non repetitive surge peak forward
current versus overload duration (maximum
values).
IM(A)
175
150
125
100
75
50
IM
25
0
1.E-03
t
δ=0.5
1.E-02
t(s)
1.E-01
Ta=25°C
Ta=75°C
Ta=125°C
1.E+00
Fig. 6: Relative variation of thermal impedance
junction to case versus pulse duration.
Zth(j-c)/Rth(j-c)
1.0
0.9
0.8
0.7
δ = 0.5
0.6
0.5
0.4 δ = 0.2
0.3 δ = 0.1
0.2
Single pulse
0.1
0.0
1.E-03
1.E-02
tp(s)
T
δ=tp/T
1.E-01
tp
1.E+00
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values).
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values).
IR(mA)
1.E+03
1.E+02
1.E+01
1.E+00
1.E-01
1.E-02
1.E-03
0
5
Tj=150°C
Tj=125°C
Tj=100°C
Tj=75°C
Tj=50°C
Tj=25°C
C(nF)
10.0
1.0
VR(V)
0.1
10
15
20
25
30
1
F=1MHz
VOSC=30mVRMS
Tj=25°C
VR(V)
10
100
Fig. 9: Forward voltage drop versus forward
current.
IFM(A)
100
Tj=125°C
(maximum values)
Tj=125°C
(typical values)
10
Tj=25°C
(maximum values)
VFM(V)
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Fig. 10: Thermal resistance junction to ambient
versus copper surface under tab (epoxy printed
board FR4, Cu = 35µm).
Rth(j-a)(°C/W)
80
70
60
50
40
30
20
10
S(Cu)(cm²)
0
0
5
10
15
20
25
30
35
40
3/6

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