FDS6575(1998) Ver la hoja de datos (PDF) - Fairchild Semiconductor

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Fabricante

FDS6575
(Rev.:1998)

Single P-Channel, Logic Level, PowerTrench™ MOSFET

Fairchild Semiconductor 

Typical Electrical Characteristics

50

V = -4.5V

GS

-3.0V

40 -2.5V

-2.0V

30

20

10

-1.5V

0

0

0.6

1.2

1.8

2.4

3

- VDS , DRAIN-SOURCE VOLTAGE (V)

Figure 1. On-Region Characteristics.

1.6

I D= -10A

1.4 VGS = -4.5V

1.2

1

0.8

0.6

-50 -25

0

25

50

75 100 125 150

TJ , JUNCTION TEMPERATURE (° C)

Figure 3. On-Resistance Variation with

Temperature.

50

VDS = -5.0V

40

30

TJ = -55° C

25° C

125° C

20

10

0

0.5

1

1.5

2

2.5

- VGS , GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics.

2.5

2

V GS = -2.0V

1.5

1

-2.5 V

-3.0 V

-3.5 V

-4.5V

0.5

0

10

20

30

40

50

- I D , DRAIN CURRENT (A)

Figure 2. On-Resistance Variation with

Dain Current and Gate Voltage.

0.05

0.04

0.03

0.02

0.01

0

1

ID = -5.0A

TJ= 125° C

25° C

2

3

4

5

- VGS , GATE TO SOURCE VOLTAGE (V)

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

50

VGS = 0V

10

TJ= 125° C

1

25° C

0.1

-55° C

0.01

0.001

0

0.3

0.6

0.9

1.2

- VSD , BODY DIODE FORWARD VOLTAGE (V)

Figure 6. Body Diode Forward Voltage

Variation with Source Current

and Temperature.

FDS6575 Rev.C1

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