IXFX55N50 Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXFX55N50 Datasheet PDF : 4 Pages
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HiPerFETTM
Power MOSFET
Single Die MOSFET
IXFK 55N50
IXFX 55N50
IXFN 55N50
VDSS
ID25
RDS(on)
trr
= 500 V
= 55 A
= 90mΩ
≤ 250 ns
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IAR
EAR
dv/dt
PD
TJ
TJM
Tstg
TL
Md
VISOL
Weight
Test Conditions
Maximum Ratings
TJ = 25°C to 150°C
TJ = 25°C to 150°C
Continuous
Transient
500
V
500
V
±20
V
±30
V
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 4 Ω
TC = 25°C
55
220
55
60
10
625
-55 ... +150
150
-55 ... +150
A
A
A
mJ
V/ns
W
°C
°C
°C
1.6 mm (0.062 in.) from case for 10 s (IXFK, IXFX) 300
°C
Mounting torque
Terminal leads
(IXFK, IXFX)
(IXFN)
1.13/10 Nm/lb.in.
1.13/10 Nm/lb.in.
50/60 Hz, RMS
IISOL ≤ 1 mA
PLUS247
TO-264
SOT-227B
(IXFN)
t = 1minute 2500
V~
t=1s
3000
V~
5
g
10
g
30
g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 1 mA
Characteristic Values
Min. Typ. Max.
500
V
VGS(th)
VDS = VGS, ID = 8 mA
2.5
4.5 V
IGSS
VGS = ±20 VDC, VDS = 0
±200 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125°C
25 µA
2 mA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
90 mΩ
PLUS247(IXFX)
G
C
E
TO-264 AA (IXFK)
(TAB)
G
D
S
D (TAB)
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
D = Drain
S = Source
TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
• International standard packages
• Encapsulating epoxy meets
UL 94 V-0, flammability classification
• miniBLOC with Aluminium nitride
isolation
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
• Fast intrinsic Rectifier
Advantages
• PLUS247 package for clip or spring
bar mounting
• Easy to mount
• Space savings
• High power density
© 2004 IXYS All rights reserved
DS97502G(11/04)
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