KDG6301N Ver la hoja de datos (PDF) - KEXIN Industrial
Número de pieza
componentes Descripción
Fabricante
KDG6301N Datasheet PDF : 4 Pages
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SMD Type
MOSFET
Dual N-Channel MOSFET
FDG6301N (KDG6301N)
■ Typical Characterisitics
6
I D = 0.22A
5
VDS = 5V
10V
4
3
2
1
0
0
0.1
0.2
0.3
0.4
0.5
0.6
Q g , GATE CHARGE (nC)
30
15
Ciss
8
Coss
5
Crss
3 f = 1 MHz
VGS = 0 V
2
0.1
0.3
1
3
10
25
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics .
1
0.3
RDS(ON) LIMIT
10ms
100ms
0.1
V GS = 4.5V
0.03 SINGLE PULSE
RθJA = 415 °C/W
TA = 25°C
1s
10s
DC
0.01
0.4
0.8
2
5
10
25 40
VDS , DRAIN-SOURCE VOLTAGE (V)
50
SINGLE PULSE
40
R θJA=415°C/W
TA= 25°C
30
20
10
0
0.0001 0.001
0.01
0.1
1
10
200
SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area.
Figure 10 . Single Pulse Maximum Power
Dissipation.
1
0.5 D = 0.5
0.2
0.1
0.05
0.02
0.01
0.005
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.002
0.0001
0.001
.
0.01
0.1
1
t1, TIME (sec)
R θJA (t) = r(t) * R θJA
R θJA =415 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA (t)
Duty Cycle, D = t1/ t 2
10
100 200
Figure 11 . Transient Thermal Response Curve .
Thermal characterization performed using the conditions described in note 1.
Transient thermal response will change depending on the circuit board design.
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