KDG6301N Ver la hoja de datos (PDF) - KEXIN Industrial
Número de pieza
componentes Descripción
Fabricante
KDG6301N Datasheet PDF : 4 Pages
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SMD Type
MOSFET
Dual N-Channel MOSFET
FDG6301N (KDG6301N)
■ Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
On State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Maximum Body-Diode Continuous Current
Diode Forward Voltage
Symbol
VDSS
IDSS
IGSS
VGS(th)
RDS(On)
ID(ON)
gFS
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
IS
VSD
Test Conditions
ID=250μA, VGS=0V
VDS=20V, VGS=0V
VDS=20V, VGS=0V, TJ=55℃
VDS=0V, VGS=±8V
VDS=VGS , ID=250μA
VGS=4.5V, ID=220mA
VGS=4.5V, ID=220mA TJ=125℃
VGS=2.7V, ID=190mA
VGS=4.5V, VDS=5V
VDS=5V, ID=220mA
VGS=0V, VDS=10V, f=1MHz
VGS=4.5V, VDS=5V, ID=220mA
VGS=4.5V, VDS=5V,ID=500mA,RG=50Ω
IS=250mA,VGS=0V (Note.1)
Note.1:Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
Min Typ Max Unit
25
V
1
μA
10
±100 nA
0.65 0.85 1.5 V
2.6 4
5.3 7
Ω
3.7 5
0.22
A
0.2
S
9.5
6
pF
1.3
0.29 0.4
0.12
nC
0.03
5 10
4.5 10
ns
4
8
3.2 7
0.25 A
0.8 1.2 V
■ Marking
Marking
.01
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