IRF150 Ver la hoja de datos (PDF) - Nell Semiconductor Co., Ltd
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componentes Descripción
Fabricante
IRF150 Datasheet PDF : 7 Pages
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SEMICONDUCTOR
IRF150 Series RRooHHSS
Nell High Power Products
Fig.10 Maximum effective transient thermal impedance,
Junction-to-Case
10
1
D ~ 0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01
0.00001
0.0001
Single pulse
(Thermal response)
PDM
t1
t2
Notes:
1. Duty factor, D = t1/ t2
2. Peak TJ = PDM * Rth(j-c) +TC
0.001
0.01
0.1
1
Rectangular pulse duration, t1 (S)
Fig.11a. Switching time test circuit
VDS
VGS
RG
RD
D.U.T.
10V
Pulse width ≤ 1µs
Duty Factor ≤ 0.1%
+
- VDD
Fig.11b. Switching time waveforms
VDS
90%
10%
VGS
td(ON)
tR
td(OFF)
tF
Fig.12a. Unclamped lnductive test circuit
Fig.12b. Unclamped lnductive waveforms
15V
L
VDS
DRIVER
BVDSS
lAS
RG
20V
tP
D.U.T.
lAS
0.01Ω
lD(t)
+
- VDD
VDD
A
tp
Vary tp to obtain required IAS
VDS(t)
Time
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