BCV28 Ver la hoja de datos (PDF) - Philips Electronics
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BCV28 Datasheet PDF : 8 Pages
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Philips Semiconductors
PNP Darlington transistors
Product specification
BCV28; BCV48
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
Rth j-s
thermal resistance from junction to ambient
note 1
thermal resistance from junction to soldering point
96
K/W
16
K/W
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2.
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
IEBO
hFE
VCEsat
VBEsat
VBEon
fT
collector cut-off current
BCV28
BCV48
emitter cut-off current
DC current gain
BCV28
BCV48
DC current gain
BCV28
BCV48
DC current gain
BCV28
BCV48
DC current gain
BCV28
BCV48
collector-emitter saturation
voltage
base-emitter saturation voltage
base-emitter on-state voltage
transition frequency
CONDITIONS
MIN. TYP. MAX. UNIT
IE = 0; VCB = −30 V
IE = 0; VCB = −60 V
IC = 0; VBE = −10 V
IC = −1 mA; VCE = −5 V; see Fig.2
IC = −10 mA; VCE = −5 V; see Fig.2
IC = −100 mA; VCE = −5 V; see Fig.2
IC = −500 mA; VCE = −5 V; see Fig.2
IC = −100 mA; IB = −0.1 mA
−
−
−
−
−
−
4000 −
2000 −
10000 −
4000 −
20000 −
10000 −
4000 −
2000 −
−
−
−100 nA
−100 nA
−100 nA
−
−
−
−
−
−
−
−
−1 V
IC = −100 mA; IB = −0.1 mA
IC = −10 mA; IB = −5 mA
IC = −30 mA; VCE = −5 V;
f = 100 MHz
−
−
−1.5 V
−
−
−1.4 V
−
220 −
MHz
1999 Apr 08
3
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