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BD540

Silicon PNP Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistor

isc Product Specification

BD540

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0

VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -1A; IB=B -0.125A

VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -3A; IB=B -0.375A

VCE(sat)-3 Collector-Emitter Saturation Voltage IC= -5A; IB=B -1A

VBE(on) Base-Emitter On Voltage

IC= -3A; VCE= -4V

ICEO

Collector Cutoff Current

VCB= -30V; IB=B 0

ICES

Collector Cutoff Current

VCE= -40V; VBE= 0

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

hFE-1

DC Current Gain

IC= -0.5A; VCE= -4V

hFE-2

DC Current Gain

IC= -1A; VCE= -4V

hFE-3

DC Current Gain

IC= -3A; VCE= -4V

MIN MAX UNIT

-40

V

-0.25

V

-0.8

V

-1.5

V

-1.25

V

-0.3 mA

-0.2 mA

-1.0 mA

40

30

12

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