EGF1AHE3_A/I Ver la hoja de datos (PDF) - Vishay Semiconductors
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EGF1AHE3_A/I Datasheet PDF : 4 Pages
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EGF1A, EGF1B, EGF1C, EGF1D
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS SYMBOL EGF1A EGF1B
EGF1C
Maximum instantaneous forward voltage 1.0 A
VF (1)
1.0
Maximum DC reverse current
at rated DC blocking voltage
TA = 25 °C
TA = 125 °C
IR (1)
5.0
50
Typical reverse recovery time
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
trr
50
Typical junction capacitance
4.0 V, 1 MHz
CJ
15
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
EGF1D
UNIT
V
μA
ns
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL EGF1A EGF1B EGF1C EGF1D UNIT
Typical thermal resistance
RJA (1)
85
RJL (1)
30
°C/W
Note
(1) Thermal resistance from junction to ambient and from junction to lead, PCB mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
EGF1D-E3/67A
0.104
67A
EGF1D-E3/5CA
0.104
5CA
EGF1DHE3_A/I (1)
0.104
I
Note
(1) AEC-Q101 qualified
BASE QUANTITY
1500
6500
6500
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise specified)
1.0
0.5
Resistive or Inductive Load
P.C.B. Mounted on
0.2" x 0.2" (5.0 mm x 5.0 mm)
Copper Pad Areas
0
0
25 50 75 100 125 150 175
Lead Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
30
25
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
20
15
10
5
0
1
10
100
Number of Cycles at 60 Hz
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Revision: 25-Aug-17
2
Document Number: 88579
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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