BUX98A Ver la hoja de datos (PDF) - New Jersey Semiconductor
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BUX98A Datasheet PDF : 3 Pages
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BUX98/BUX98A
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
0.7
°C/W
ELECTRICAL CHARACTERISTICS (Tease = 25 °C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
ICER Collector Cut-off
VCE = VCES
Current (RBE = 10 £i) VCE = VCES
TCASE = 125 °C
1
HA
8
mA
ICES Collector Cut-off
Current (VBE = 0 )
VCE = VCES
VCE = VCES
TCASE = 1 25 °C
400 HA
4
mA
ICEO Collector Cut-off
Current (le = 0)
VCE = VCEO
2
mA
IEBO Emitter Cut-off Current VEB = 5 V
(lc = 0)
2
mA
VcEO(sus)* Collector-Emitter
Sustaining Voltage
Ic = 200 mA
for BUX98
for BUX98A
400
V
450
V
VcER(sus)* Collector-Emitter
L = 2mH
lc = 1 A
Sustaining Voltage
for BUX98
850
V
for BUX98A
1000
V
VcE(sat)* Collector-Emitter
Saturation Voltage
for BUX98
lc = 20 A
for BUX98A
Ic = 16 A
IC = 2 4 A
IB = 4 A
IB = 3.2 A
IB = 5 A
1.5
V
1.5
V
5
V
VeE(sal)* Base-Emitter
Saturation Voltage
ton
Turn-on Time
for BUX98
lc = 20 A
for BUX98A
lc=16A
for BUX98
IB = 4 A
IB = 3.2 A
1.6
V
1.6
v
1
U.S
ts
Storage Time
tf
Fall Time
Vcc = 150 V
|B1 = . |B2 = 4 A
lc = 20 A
3
Ms
0.8
US
ton
Turn-on Time
for BUX98A
1
\iS
ts
Storage Time
Vcc = 150 V
tf
Fall Time
IBI = - lB2 = 3.2 A
: Pulsed: Pulse duration = 300 us, duty cycle = 1.5 %
lc = 16 A
3
US
0.8
US
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