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AN4105 Ver la hoja de datos (PDF) - Fairchild Semiconductor

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AN4105 Datasheet PDF : 22 Pages
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AN4105
APPLICATION NOTE
n
Vi=10 0V
V i= 400 V
M e rits & de m e rits
V DS
V DS
nVO=67V
V i=1 0 0V
0
n VO =6 7 V
V i=4 0 0V
VD
1
V i/n =7 5 V
0
V O= 50 V
V D S=1 67V
V D=1 25 V
V DS
n VO =1 0 0 V
V i=1 0 0V
0
2
VD
V i/n =5 0 V
V O= 50 V
0
0
VD
V i/n =2 6 7 V
0
V O= 50 V
VDS=46 7V
VD=31 7V
V DS
n VO =1 0 0 V
V i=4 0 0V
0
VD
V i/n =2 0 0 V
-V oltage applied to sw itch device is
lo w
-E ffective current in sw itching device
and prim ary w inding is low
-V oltage applied to rectifier diode is
h ig h
-O utput volta ge ripple is sm all
-C ontrol m ust be done through short
turn-on tim e
n:1
VLm
VD
Vi
VDS
- Inte rm e dia te D e sign M e thod
V D S=2 00V
V D=1 00 V
V DS
0
V i=1 0 0V
n VO =1 5 0 V
3
VD
V i/n =3 3 V
0
V O= 50 V
V D S=2 50V
VD= 83V
V O= 50 V
0
VDS=50 0V
VD=25 0V
V DS
n VO =1 5 0 V
V i=4 0 0V
0
VD
0
V i/n =1 3 3 V
V O= 50 V
VDS=55 0V
VD=18 3V
-V oltage applied to sw itch device is
h ig h
-E ffective current in sw itching device
and prim ary w inding is high
-V oltage applied to rectifier diode is
lo w
-O utput volta ge ripple is large l
-C ontrol m ust be done through long
turn-on tim e
Figure 18. The current and voltage ratings required on the primary side switching device and the secondary side
rectifier diode depend on the turns ratio (n) selected.
4.3.2.3 Designer’s Choice
As is clear from the above discussion, DCM operation can
be advantageous, in terms of cost and efficiency, if the input
is small and it is required to precisely control the input power
through the primary side switch (MOSFET) current.
On the other hand, for large inputs and where switching turn
on loss could be a major problem, a CCM design would be
more advantageous. In conclusion, therefore, the system
designer must decide between the two modes according to
which mode best fits the characteristics of the system being
designed.
16
©2002 Fairchild Semiconductor Corporation

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