2SD718 Ver la hoja de datos (PDF) - Jiangsu Changjiang Electronics Technology Co., Ltd

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2SD718

TO-3P Plastic-Encapsulate Transistors

Jiangsu Changjiang Electronics Technology Co., Ltd 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-3P Plastic-Encapsulate Transistors

2SD718 TRANSISTOR (NPN)

FEATURES

z High Breakdown Voltage

z Complementary to 2SB688

TO – 3P

1. BASE

2. COLLECTOR

3. EMITTER

APPLICATIONS

z Power Amplifier Applications

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

VCBO

VCEO

VEBO

IC

PC

RθJA

Tj

Tstg

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

Storage Temperature

Value

120

120

5

8

3

42

150

-55~+150

Unit

V

V

V

A

W

℃/W

℃

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter voltage

Collector output capacitance

Transition frequency

*Pulse test

Symbol

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

IEBO

hFE*

VCE(sat)*

VBE*

Cob

fT

Test conditions

IC=100µA,IE=0

IC=50mA,IB=0

IE=100µA,IC=0

VCB=120V,IE=0

VEB=5V,IC=0

VCE=5V, IC=1A

IC=5A,IB=500mA

VCE=5V, IC=5A

VCB=10V,IE=0, f=1MHz

VCE=5V,IC=1A, f=1MHz

Min Typ Max Unit

120

V

120

V

5

V

10

μA

10

μA

55

160

2.5

V

1.5

V

280

pF

10

MHz

CLASSIFICATION OF hFE

RANK

RANGE

R

55-110

O

80-160

www.cj-elec.com

1

B,Nov,2014

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