FGH80N60FD2 Ver la hoja de datos (PDF) - Fairchild Semiconductor

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FGH80N60FD2

600 V Field Stop IGBT

Fairchild Semiconductor 

Electrical Characteristics of the Diode TC = 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

VFM

Diode Forward Voltage

IF = 15 A

trr

Diode Reverse Recovery Time

IES = 15 A,

Irr

Diode Reverse Recovery Current dIES / dt = 200 A/s

Qrr

Diode Reverse Recovery Charge

TC = 25C

TC = 125C

TC = 25C

TC = 125C

TC = 25C

TC = 125C

TC = 25C

TC = 125C

Min.

-

-

-

-

-

-

-

-

Typ.

1.2

1.0

61

125

4.8

8.4

146

525

Max

1.5

-

-

-

-

-

-

-

Unit

V

ns

ns

nC

©2008 Fairchild Semiconductor Corporation

3

FGH80N60FD2 Rev. C0

www.fairchildsemi.com

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