IXFE44N60 Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXFE44N60 Datasheet PDF : 2 Pages
| |||
IXFE 44N60
Symbol
gfs
C
iss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Q
gd
R
thJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDS = 10 V; ID = IT, Note:1
VGS = 0 V, VDS = 25 V, f = 1 MHz
VGS = 10 V, VDS = 0.5 • VDSS, ID = IT
RG = 1 Ω (External),
VGS = 10 V, VDS = 0.5 • VDSS, ID = IT
30
45 S
8900
pF
1000
pF
330
pF
42
ns
55
ns
110
ns
45
ns
330
nC
60
nC
65
nC
0.25 K/W
0.07
K/W
ISOPLUS-227 B
Source-Drain Diode
Symbol
IS
Test Conditions
VGS = 0 V
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
44 A
ISM
Repetitive;
pulse width limited by T
JM
VSD
IF = IS, VGS = 0 V,
Note:1
trr
IF = 50A, -di/dt = 100 A/µs, VR = 100 V
Q
RM
IRM
176 A
1.3 V
250 ns
1.4
µC
8
A
Please see IXFN44N60 data sheet
for characteristic curves.
Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
2.
Test
current
I
T
=
22A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
Share Link: 