S7010 Ver la hoja de datos (PDF) - Hamamatsu Photonics
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S7010 Datasheet PDF : 10 Pages
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CCD area image sensor S7010/S7011/S7015 series
I A bsolute m axim um ratings (T a =25 °C )
P aram eter
O perating tem perature
S torage tem perature
O D voltage
R D voltage
IS V voltage
IS H voltage
IG V voltage
IG H voltage
S G voltage
O G voltage
R G voltage
TG voltage
V ertical clock voltage
H orizontal clock voltage
Sym bol
Topr
T s tg
VOD
VRD
V IS V
V IS H
V IG 1V , V IG 2V
V IG 1H , V IG 2H
VSG
VOG
VRG
VTG
VP1V, VP2V
VP1H, VP2H
I O perating conditions (M P P m o de, T a=25 °C )
P aram eter
Sym bol
O utput transistor drain voltage
VOD
R eset drain voltage
VRD
O utput gate voltage
VOG
S ubstrate voltage
VSS
Test point (vertical input source)
V IS V
Test point (horizontal input source)
V IS H
Test point (vertical input gate)
V IG 1V , V IG 2V
Test point (horizontal input gate)
V IG 1H , V IG 2H
V ertical shift register
H igh
VP1VH, VP2VH
clock voltage
Low
VP1VL, VP2VL
H orizontal shift register
H igh
VP1HH, VP2HH
clock voltage
Low
VP1HL, VP2HL
S um m ing gate voltage
H igh
Low
VSGH
VSGL
R eset gate voltage
H igh
Low
VRGH
VRGL
Transfer gate voltage
H igh
Low
VTGH
VTGL
M in.
-50
-50
-0 .5
-0 .5
-0 .5
-0 .5
-10
-10
-10
-10
-10
-10
-10
-10
M in.
18
1 1 .5
1
-
-
-
-8
-8
4
-9
4
-9
4
-9
4
-9
4
-9
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
20
12
3
0
VRD
VRD
0
0
6
-8
6
-8
6
-8
6
-8
6
-8
I E lectrical characteristics (Ta= 25 °C )
P aram eter
Sym bol
M in.
Typ.
S ignal output frequency
fc
-
-
Vertical shift register capacitance *3
CP1V, CP2V
-
3 ,0 0 0
H orizontal shift register capacitance *3
CP1H, CP2H
-
120
S um m ing gate capacitance
CSG
-
7
R eset gate capacitance
CRG
-
7
Transfer gate capacitance
CTG
-
120
C harge transfer efficiency *4
CTE
0 .9 9 9 9 5
0 .9 9 9 9 9
D C output level *5
Vout
12
15
O utput im pedance *5
Zo
-
3
P ow er consum ption *5 *6
P
-
15
*3 : S 7 0 1 0 /S 7 0 11 -1 0 0 7
*4: C harge transfer efficiency per pixel, m easured at half of the full w ell.
*5: The values depend on the loa d resistance. (typical, V O D =20 V, load resistance=22 kW )
*6 : P o w e r c o n s u m p tio n o f th e o n -c h ip a m p lifie r.
I E lectrical and optical characte ristics (Ta=25 °C , unless otherw ise noted)
P aram eter
Sym bol
M in.
S aturation output voltage
Vsat
-
F ull w ell capacity
V ertical
Horizontal *7
Fw
1 5 0 ,0 0 0
3 0 0 ,0 0 0
C C D node sensitivity
D ark current *8 M PP m ode
(tentative data)
25 °C
0 °C
Sv
1 .8
DS
-
-
R eadout noise *9
Nr
-
D ynam ic range *10
Line binnng
A rea scanning
DR
2 5 ,0 0 0
1 2 ,0 0 0
P hoto response non-uniform ity *11
PRNU
-
S pectral response range
l
-
*7: Large horizontal full w ell for vertical binning operation.
*8: D ark current nearly doubles for every 5 to 7 °C increase in tem perature.
*9: -40 °C , operating frequency is 150 kH z.
*10: D ynam ic range: D R = F ull w ell/R eadout noise.
*11 : M e a s u re d a t h a lf o f fu ll w e ll c a p a c ity.
P hoto response non-uniform ity:
Fixed pattern noise (peak to peak)
PR N U (% ) =
Signal
× 100
Typ.
Fw × Sv
3 0 0 ,0 0 0
6 0 0 ,0 0 0
2 .2
400
20
8
7 5 ,0 0 0
3 7 ,5 0 0
±3
400 to 1,100
M a x.
+30
+70
+25
+18
+18
+18
+15
+15
+15
+15
+15
+15
+15
+15
M a x.
22
1 2 .5
5
-
-
-
-
-
8
-7
8
-7
8
-7
8
-7
8
-7
M a x.
1
-
-
-
-
-
-
18
-
-
M a x.
-
-
-
-
3000
150
12
-
-
±10
-
U nit
°C
°C
V
V
V
V
V
V
V
V
V
V
V
V
U nit
V
V
V
V
V
V
V
V
V
V
V
V
V
U nit
MHz
pF
pF
pF
pF
pF
-
V
kW
mW
U nit
V
e-
µV /e-
e -/p ixe l/s
e- rm s
-
-
%
nm
2
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