HER201G Ver la hoja de datos (PDF) - Jiangsu High diode Semiconductor Co., Ltd
Número de pieza
componentes Descripción
Fabricante
HER201G Datasheet PDF : 4 Pages
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HER201 G THRU HER208G
DO-1 5 Plastic-Encapsulate Diodes
High Efficient Rectifier
HD ZC60
Features
●Io
2.0A
●VRRM
50V-1000V
●High surge current capability
●Glass passivated chip
●Polarity: Color band denotes cathode
Applications
● Rectifier
Marking
● HER20XG
X:From 1 to 8
DO-1 5
Item
Symbol Unit
Repetitive Peak Reverse Voltage VRRM
V
Maximum RMS Voltage
VRMS
V
Conditions
HER20
1G 2G 3G 4G 5G 6G 7G 8G
50 100 200 300 400 600 800 1000
35 70 140 210 280 420 560 700
Average Forward Current
IF(AV)
A
60Hz Half-sine wave, Resistance
load, Ta=75℃
2.0
Surge(Non-repetitive)Forward
Current
Junction Temperature
Storage Temperature
IFSM
TJ
TSTG
A
60Hz Half-sine wave,1 cycle,
Ta=25℃
℃
℃
60
-55~+150
-55 ~ +150
Electrical Characteristics (Ta=25℃ Unless otherwise specified)
Item
Symbol Unit
Test Condition
HER20
1G 2G 3G 4G 5G 6G 7G 8G
Peak Forward Voltage
VFM
V
IFM=2.0A
1.0
1.3
1.7
Peak Reverse Current
IRRM1
μA
IRRM2
Reverse Recovery time
trr
ns
VRM=VRRM
Ta=25℃
Ta=125℃
IF=0.5A IR=1A
IRR=0.25A
5
50
50
75
Thermal
Resistance(Typical)
RθJ-A
RθJ-L
℃/W
Between junction and ambient
Between junction and lead
25
20
High Diode Semiconductor
1
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