Philips Semiconductors
BGD902
860 MHz, 18.5 dB gain power doubler amplifier
−50
Xmod
(dB)
−60
−70
−80
mda943
52
Vo
(1) (dBmV)
(2)
48
(3)
(4)
44
40
−50
CSO
(dB)
−60
−70
−80
mda944
52
Vo
(1) (dBmV)
48
(2)
(3)
44
(4)
40
−90
0
36
200
400
600
800 1000
f (MHz)
ZS = ZL = 75 Ω; VB = 24 V; 129 chs; tilt = 12.5 dB
(50 MHz to 860 MHz).
(1) Vo.
(2) Typ. +3 σ.
(3) Typ.
(4) Typ. −3 σ.
Fig 5. Cross modulation as a function of frequency
under tilted conditions
−20
CTB
(dB)
−30
mda945
−90
0
36
200
400
600
800 1000
f (MHz)
ZS = ZL = 75 Ω; VB = 24 V; 129 chs; tilt = 12.5 dB
(50 MHz to 860 MHz).
(1) Vo.
(2) Typ. +3 σ.
(3) Typ.
(4) Typ. −3 σ.
Fig 6. Composite second order distortion as a
function of frequency under tilted conditions
−20
CSO
(dB)
−30
mda946
−40
−40
−50
−50
−60
(1)
(2)
(3)
−70
40
45
50
55
Vo (dBmV)
ZS = ZL = 75 Ω; VB = 24 V; 129 chs;
fm = 859.25 MHz.
(1) Typ. +3 σ.
(2) Typ.
(3) Typ. −3 σ.
Fig 7. Composite triple beat as a function of output
voltage
−60
(1)
(2)
(3)
−70
40
45
50
55
Vo (dBmV)
ZS = ZL = 75 Ω; VB = 24 V; 129 chs; fm = 860.5 MHz.
(1) Typ. +3 σ.
(2) Typ.
(3) Typ. −3 σ.
Fig 8. Composite second order distortion as a
function of output voltage
9397 750 14435
Product data sheet
Rev. 07 — 8 March 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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