SMBT3906/ MMBT3906
PNP Silicon Switching Transistor
3
• High DC current gain: 0.1 mA to 100 mA
• Low collector-emitter saturation voltage
• Complementary type:
SMBT3904/ MMBT3904 (NPN)
2
1 VPS05161
Type
Marking
SMBT3906/ MMBT3906 s2A
Pin Configuration
1=B 2=E 3=C
Package
SOT23
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
Collector-base voltage
VCEO
VCBO
Emitter-base voltage
Collector current
VEBO
IC
Total power dissipation-
Ptot
TS = 71 °C
Junction temperature
Tj
Storage temperature
Tstg
Thermal Resistance
Parameter
Junction - soldering point1)
Symbol
RthJS
1For calculation of RthJA please refer to Application Note Thermal Resistance
Value
40
40
5
200
330
150
-65 ... 150
Value
≤240
Unit
V
mA
mW
°C
Unit
K/W
1
Jul-28-2003