MMBT3906 Ver la hoja de datos (PDF) - Jiangsu Changjiang Electronics Technology Co., Ltd
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MMBT3906 Datasheet PDF : 4 Pages
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
JC(T
MMBT3906
SOT-23 Plastic-Encapsulate Transistors
TRANSISTOR (PNP)
SOT–23
FEATURES
z As complementary type, the NPN transistor
MMBT3904 is Recommended
z Epitaxial planar die construction
MARKING: 2A
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
1. BASE
2. EMITTER
3. COLLECTOR
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Thermal resistance junction to ambient
Junction Temperature
Storage Temperature
Value
-40
-40
-5
-0.2
0.2
625
150
-55~+150
Units
V
V
V
A
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Delay Time
Rise Time
Storage Time
Fall Time
CLASSIFICATION OF hFE(1)
HFE
RANK
RANGE
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEX
IEBO
hFE1
hFE2
hFE3
VCE(sat)1
VBE(sat)
fT
td
tr
ts
tf
Test conditions
IC=-10μA, IE=0
IC= -1mA, IB=0
IE= -10μA, IC=0
VCB= -40 V, IE=0
VCE=-30V, VBE(off)=-3V
VEB= -5V, IC=0
VCE=-1V, IC= -10mA
VCE= -1V, IC=-50mA
VCE= -1V, IC=-100mA
IC=-50mA, IB=-5mA
IC= -50mA, IB=-5mA
VCE=-20V,IC=-10mA,f=100MHz
VCC=-3V,VBE=-0.5V
IC=-10mA, IB1=IB2=-1mA
VCC=-3V,IC=-10mA
IB1=IB2=-1mA
MIN
-40
-40
-5
100
60
30
300
MAX
-100
-50
-100
300
-0.3
-0.95
35
35
225
75
L
100–200
100-300
H
200–300
UNIT
V
V
V
nA
nA
nA
V
V
MHz
nS
nS
nS
nS
www.cj-elec.com
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FA,M,Juany,20154
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