FQA65N20 Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
FQA65N20 Datasheet PDF : 8 Pages
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Typical Characteristics
Top :
VGS
15 V
10 V
102
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
101
10-1
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
100
101
VDS , Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
0.15
0.12
VGS = 10V
0.09
V = 20V
GS
0.06
0.03
0.00
0
※ Note : TJ = 25℃
50
100
150
200
250
300
350
ID , Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
14000
12000
10000
8000
6000
4000
2000
0
10-1
C
iss
C
oss
C
rss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
102
101
100
10-1
2
150℃
25℃
-55℃
※ Notes :
1. VDS = 40V
2. 250μ s Pulse Test
4
6
8
10
VGS , Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
102
101
150℃ 25℃
100
※ Notes :
1. VGS = 0V
2. 250μ s Pulse Test
10-1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
V , Source-Drain Voltage [V]
SD
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
V = 40V
DS
10
VDS = 100V
V = 160V
DS
8
6
4
2
※ Note : ID = 65 A
0
0
20
40
60
80 100 120 140 160 180
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
©2001 Fairchild Semiconductor Corporation
Rev. A1, August 2001
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