BC857A Ver la hoja de datos (PDF) - Galaxy Semi-Conductor

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componentes Descripción

Fabricante

BC857A

PNP general purpose Transistor

Galaxy Semi-Conductor 

Production specification

PNP general purpose Transistor

BC856/857/858

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol Test conditions

MIN TYP MAX UNIT

Collector-base breakdown voltage BC856

-80

BC857 V(BR)CBO IC=-10μA,IE=0

-50

V

BC858

-30

Collector-emitter breakdown voltage BC856

-65

BC857 V(BR)CEO IC=-10mA,IB=0

-45

V

BC858

-30

Emitter-base breakdown voltage

V(BR)EBO IE=-1μA,IC=0

-5

V

Collector cut-off current

ICBO

VCB=-30V,IE=0

-1 -15 nA

Emitter cut-off current

IEBO

VEB=-5V,IC=0

-0.1 μA

DC current gain

BC856A,857A,858A

125

250

BC856B,857B,858B hFE

VCE=-5V,IC=-2mA

220

475

BC857C,858C

420

800

Collector-emitter saturation voltage

VCE(sat)

IC=-100mA, IB=-5mA

IC=-10mA, IB=-0.5mA

-0.65

V

-0.3

Base-emitter saturation voltage

Base-emitter voltage

collector capacitance

Transition frequency

VBE(sat)

VBE(on)

Cc

F

IC=-10mA, IB=-0.5mA

-0.7

V

IC=-100mA, IB=-5mA

-0.85

IC=-2mA,VCE=-5V

IC=-10mA,VCE=-5V

-0.6 -0.65 -0.75

V

-0.82

VCB=-10V,IE=Ie=0

4.5

pF

f=1MHz

IC=-200uA,VCE=-5V,

RS=2kΩ,f=1kHz,

B=200Hz

2 10 dB

Transition frequency

fT

VCE=-5V, IC= -10mA 100

f=100MHz

MHz

C044

Rev.B

www.gmicroelec.com

2

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