ABS10 Ver la hoja de datos (PDF) - Sangdest Microelectronic (Nanjing) Co., Ltd
Número de pieza
componentes Descripción
Fabricante
ABS10 Datasheet PDF : 5 Pages
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Technical Data
Data Sheet N1693, Rev. -
ABS2
THRU
ABS10
Green Products
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified
Single Phase half wave 60Hz, resistive or inductive load. For capacitive load current derate by 20%.
Characteristic
Symbol ABS2
ABS4
ABS6
ABS8 ABS10 Units
Maximum repetitive peak reverse voltage
VRRM
200
RMS Reverse Voltage
VR(RMS)
140
Maximum DC blocking voltage
VDC
200
Maximum average forward rectified current
On glass-epoxy P.C.B.(Note1) I(AV)
On aluminum substrate(Note2)
Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on IFSM
rated load (JEDEC Method)
Maximum instantaneous forward voltage drop
per leg at 0.4A
VF
Maximum DC reverse current TA = 25°C
at rated DC blocking voltage TA = 100°C
Typical thermal resistance (Note 3)
Operating junction and storage temperature
range
IR
RθJL
RθJA
TJ,TSTG
400
600
800 1000
280
420
560
700
V
400
600
800 1000
0.8
V
1.0
30
A
0.95
5
100
25
80
-55 to +150
V
µA
°C/W
°C
Note: 1. On glass epoxy P.C.B. mounted on 0.05x0.05''(1.3x1.3mm) pads
2. On aluminum substrate P.C.B. with on area of 0.8''x0.8''(20x20mm) mounted on 0.05X0.05''(1.3X1.3mm) solder pad
3. Thermal resistance form junction to ambient and junction to lead mounted on P.C.B. with 0.2X0.2''(5X5mm)
copper pads.
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